Apparatus for manufacturing single crystal

ABSTRACT

A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.

CROSS REFERENCE TO RELATED APPLICATION

This application is based on Japanese Patent Application No. 2003-285972filed on Aug. 4, 2003, the disclosure of which is incorporated herein byreference.

FIELD OF THE INVENTION

The present invention relates to a method and apparatus formanufacturing a single crystal.

BACKGROUND OF THE INVENTION

Silicon carbide (i.e., SiC) single crystal has excellent thermal andchemical properties. Further, a forbidden band width in the SiC islarger than that of silicon single crystal, so that the SiC singlecrystal also has excellent electronic property. Therefore, the SiCsingle crystal is available for high power device, high temperaturedevice, and high frequency device. The SiC single crystal havinghexagonal crystal structure for manufacturing a SiC semiconductor waferis formed by a sublimation recrystallization method (i.e., modified Lelymethod). The modified Lely method is such that raw material is heatedand sublimed so that the SiC single crystal grows from a seed crystal.It is required to form a large diameter and long SiC single crystal.Further, it is required to form the SiC single crystal having no crystaldefect and distortion.

SUMMARY OF THE INVENTION

In view of the above-described problem, it is an object of the presentinvention to provide a method for manufacturing a silicon carbide singlecrystal having good quality.

A method for manufacturing a single crystal includes the steps of:flowing a raw material gas toward a seed crystal in a reactive chamberso that the single crystal grows from the seed crystal; controlling theraw material gas by a gas flow control member having a cylindricalshape; passing the raw material gas through a clearance between the seedcrystal and an inner wall of the gas flow control member; and flowing apart of the raw material gas to bypass the seed crystal.

The method provides the single crystal having good quality and havinglong length and large diameter. Specifically, the raw material gas isconcentrated with the gas flow control member so that the raw materialgas flows toward the seed crystal. The concentration of the raw materialgas at the growth surface of the seed crystal becomes higher so that thesingle crystal grows smoothly. Further, no poly crystal is preventedfrom adhering to a bottom end of the gas flow control member and aninner wall of the gas flow control member, so that the single crystalgrows from the seed crystal without contacting the poly crystal.

Further, a method for manufacturing a single crystal includes the stepsof: flowing a raw material gas toward a seed crystal in a reactivechamber so that the single crystal grows from the seed crystal;controlling the raw material gas by a gas flow control member having acylindrical shape; passing the raw material gas through a clearancebetween the seed crystal and an inner wall of the gas flow controlmember; and growing the single crystal to have a predetermined shape,which includes an initial crystal growth part having an uniform diameterin a growth direction. The initial crystal growth part of the singlecrystal grows from the seed crystal at a beginning step of a crystalgrowth.

The method provides the single crystal having good quality. In thiscase, the concentration of the raw material gas at the growth surface ofthe seed crystal becomes higher so that the single crystal growssmoothly. Further, strain generated from an interface between the seedcrystal and a base for mounting the seed crystal is reduced, so that theinitial single crystal having good quality is obtained.

Further, an apparatus for manufacturing a single crystal includes: aseed crystal; a reactive chamber for flowing a raw material gas so thatthe single crystal grows from the seed crystal disposed in the reactivechamber; a gas flow control member for controlling the raw material gasto flow toward the seed crystal; and a gas passage disposed between thereactive chamber and the gas flow control member. The gas flow controlmember surrounds the seed crystal through a clearance. The clearance iscapable of passing the raw material gas therethrough. The gas passage iscapable of flowing a part of the raw material gas to bypass the seedcrystal. The apparatus provides the single crystal having good qualityand having long length and large diameter.

Further, an apparatus for manufacturing a single crystal includes a seedcrystal; a reactive chamber for flowing a raw material gas so that thesingle crystal grows from the seed crystal disposed in the reactivechamber; a gas flow control member for controlling the raw material gasto flow toward the seed crystal; and a through hole disposed in the gasflow control member. The gas flow control member surrounds the seedcrystal through a clearance. The clearance is capable of passing the rawmaterial gas therethrough. The through hole is capable of flowing a partof the raw material gas to bypass the seed crystal. The through hole isdisposed at an outside of the gas flow control member. The apparatusprovides the single crystal having good quality and having long lengthand large diameter.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the presentinvention will become more apparent from the following detaileddescription made with reference to the accompanying drawings. In thedrawings:

FIG. 1 is a cross sectional view showing an apparatus for manufacturingSiC single crystal according to a first embodiment of the presentinvention;

FIG. 2 is a cross sectional view explaining crystal growth performed bythe apparatus according to the first embodiment;

FIG. 3 is a cross sectional view explaining the crystal growth performedby the apparatus according to the first embodiment;

FIG. 4 is a schematic side view showing dimensions of the SiC singlecrystal, according to the first embodiment;

FIG. 5 is a schematic side view showing dimensions of a gas flow controlmember in the apparatus according to the first embodiment;

FIG. 6 is a schematic side view showing dimensions of the apparatusaccording to the first embodiment;

FIG. 7 is a cross sectional view showing an apparatus for manufacturingSiC single crystal according to the other embodiments of the presentinvention;

FIG. 8 is a cross sectional view showing an apparatus according to theother embodiments;

FIG. 9 is a cross sectional view showing an apparatus according to theother embodiments;

FIG. 10 is a cross sectional view showing an apparatus according to theother embodiments;

FIG. 11 is a cross sectional view showing an apparatus according to theother embodiments;

FIG. 12 is a cross sectional view showing an apparatus according to theother embodiments;

FIG. 13 is a cross sectional view showing an apparatus as a comparison,according to the first embodiment;

FIG. 14 is a cross sectional view explaining crystal growth performed bythe apparatus as the comparison, according to the first embodiment;

FIG. 15 is a cross sectional view showing another apparatus as anothercomparison, according to the first embodiment; and

FIG. 16 is a cross sectional view explaining crystal growth performed bythe other apparatus as the other comparison, according to the firstembodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

The inventors have preliminary studied about a sublimationrecrystallization method for manufacturing a silicon carbide (i.e., SiC)single crystal. As shown in FIG. 13, a crucible 100 has an upperopening, which is covered with a cover 101. A SiC raw material 102 isintroduced in the crucible 100. The cover 101 has a base 103 protrudedfrom the cover 101. A seed crystal 104 is mounted on the base 103. Thebase 103 is disposed at almost center of the cover 101. A SiC singlecrystal 105 grows from the seed crystal 104. Further, a SiC poly crystal106 is deposited around the base 103. The timing for contacting the SiCpoly crystal 106 to the SiC single crystal 105 is delayed so that theSiC single crystal 105 grows larger. Specifically, the diameter of theSiC single crystal 105 becomes larger.

However, when the crystal growth proceeds at a certain amount, the SiCpoly crystal 106 contacts the SiC single crystal 105, as shown in FIG.14. Thus, the SiC single crystal 105 is prevented from growing so thatthe diameter and the length of the SiC single crystal 105 do not becomelarger much more. Further, when the SiC poly crystal 106 contacts theSiC single crystal 105, a strain is introduced into the SiC singlecrystal 105 from an interface between the SiC single crystal 105 and theSiC poly crystal 106. Further, a macro defect may be generated in theSiC single crystal 105. Therefore, the crystalline quality of the SiCsingle crystal 105 is reduced.

To protect the SiC single crystal 105 from the SiC poly crystal 106, aguide 110 is formed in the crucible 100, as shown in FIG. 15. The guide110 separates the SiC poly crystal 106 from the SiC single crystal 105so that the sublimation gas of the SiC raw material 102 is introduced tothe seed crystal 104 effectively. The SiC single crystal 105 growsefficiently, and the SiC poly crystal 106 is deposited around the seedcrystal 104 slowly. Thus, the SiC single crystal 105 grows largely.However, the SiC poly crystal 106 is deposited on the inner wall of theguide 110. In this case, the SiC poly crystal 106 may contact the SiCsingle crystal 105, so that the diameter and the length of the SiCsingle crystal 105 do not become larger much more. Further, the strainis introduced into the SiC single crystal 105, and the macro defect isgenerated in the SiC single crystal 105. Thus, the crystalline qualityof the SiC single crystal 105 is reduced.

In view of the above study, a new method according to a first embodimentof the present invention is provided as follows.

FIGS. 1 to 3 show an apparatus for manufacturing a SiC single crystal11. The SiC single crystal 11 grows from a SiC seed crystal 5 by asublimation re-crystallization method (i.e., modified Lely method). InFIG. 1, a growth chamber for manufacturing the SiC single crystal 11includes a graphite crucible 1 and a graphite cover 2. The graphitecrucible 1 has a cylindrical shape having a bottom. The graphitecrucible 1 has an upper opening, which is covered with the graphitecover 2. Thus, the cover 2 closes the upper opening of the crucible 1,so that the inside of the crucible 1 becomes almost sealed space. Here,the crucible 1 can be coated with a high heat resistance material suchas tantalum carbide (i.e., TaC), tungsten carbide (i.e., WC) and siliconcarbide (i.e., SiC).

A SiC raw material 3 is introduced into the crucible 1. The SiC rawmaterial 3 is a powder of the SiC. A base 4 for supporting a SiC seedcrystal 5 is protruded from the cover 2. Specifically, the base 4 isdisposed at the center of the cover, and disposed on the bottom of thecover 2. The cover 2 and the base 4 are integrally formed each other.The base 4 has a cylindrical shape. However, the base 4 can have anothershape. Preferably, the base 4 has a cylindrical shape. The base 4protrudes from the bottom of the cover 2 sufficiently. The SiC seedcrystal 5 is mounted on the bottom of the base 4. The seed crystal is aSiC single crystal substrate. Thus, one surface of the seed crystal 5 isbonded to the bottom of the base 4. The other surface of the seedcrystal 5 faces the SiC raw material 3. The seed crystal 5 has the samediameter as the base 4. The seed crystal 5 is disposed horizontally, andthe SiC single crystal 11 grows in a growing direction parallel to anormal line of the bottom of the seed crystal 5, which is parallel to avertical direction of the apparatus.

The raw material 3 is the SiC powder formed by Acheson method orchemical synthesis method. The seed crystal 5 is the SiC single crystalformed by the Acheson method or the Lely method, or formed by themodified Lely method from the SiC single crystal obtained by the Achesonmethod or the Lely method. The SiC single crystal obtained by theAcheson method or the Lely method is Acheson crystal or Lely crystal.The seed crystal has a thickness in a range between 0.1 mm and 10 mm.

A heater (not shown) is disposed around the crucible 1. The heater is,for example, an induction coil or the like. The heater heats the insideof the crucible 1, i.e., the raw material 3. A gas flow control member 6is formed in the growth chamber, i.e., the crucible 1 with the cover 2.The gas flow control member 6 surrounds the seed crystal 5 and the SiCsingle crystal 11 to be formed on the seed crystal 5 through a clearance9. The gas flow control member 6 controls the gas flow flowing in thegrowth chamber so that the gas flows toward the seed crystal 5. The gasflow control member 6 is formed from a plate, and composed of an uppercylinder 7 and a lower cylinder (i.e., a lower cone) 8. Thus,preferably, the gas flow control member 6 has a cylindrical shape.However, the gas flow control member 6 can have another shape. The uppercylinder 7 has a uniform inner diameter, and the lower cylinder 8 has atapered shape. The top end opening of the upper cylinder 7 is disposedaround the base 4, which is disposed on the upper side from the seedcrystal 5. The bottom end opening of the upper cylinder 7 is disposed onthe lower side from the seed crystal 5. Therefore, the seed crystal 5 isdisposed in the upper cylinder 7. Thus, the upper cylinder 7 is disposedin a certain height range, which includes the height of the seed crystal5 and a predetermined height apart from the bottom (i.e., the growthsurface) of the seed crystal 5. The upper cylinder 7 is disposedseparately from the base 4 so that the clearance 9 between the base 4and the upper cylinder 7 is formed. Thus, the upper cylinder 7 isseparated from the base 4 spatially. The raw material gas flows throughthe clearance 9, as shown in FIG. 3. The lower cylinder 8 smoothlyconnects to the bottom end opening of the upper cylinder 7. The uniforminner diameter of the upper cylinder 7 is equal to an inner diameter ofthe upper end of the lower cylinder 8. The inner diameter of the lowercylinder 8 becomes larger linearly in the growth direction (i.e., towardthe growth direction).

A gas passage 10 is disposed between the gas flow control member 6 andthe inner wall of the crucible 1 so that a part of the raw material gasflows through the gas passage 10 to bypass the gas flow control member6, i.e., the seed crystal 5. Thus, the part of the raw material gasflows through the gas passage 10 along with the inner wall of thecrucible 1, which faces the SiC single crystal 11. The upper cylinder 7of the gas flow control member 6 corresponds to the early stage (i.e.,the beginning) of the crystal growth from the seed crystal 5, and theinner diameter of the upper cylinder 7 does not increase. The lowercylinder 8 of the gas flow control member 6 corresponds to the secondstage of the crystal growth. The inner diameter of the lower cylinder 8increases. Thus, the SiC single crystal 11 grows without increasing thediameter of the single crystal 11 at the early stage of the crystalgrowth. The SiC single crystal 11 grows with increasing the diameter ofthe single crystal 11 at the second stage of the crystal growth.

Next, the SiC single crystal 11 grows from the seed crystal 5 asfollows. Firstly, the cover 2 is removed from the crucible 1. The seedcrystal 5 is bonded to the base 4 with adhesive. The SiC raw material 3is inserted into the crucible 1. After that, the cover 2 is attached onthe crucible 1.

The crucible 1 is heated in a furnace filled with high purity argon gasatmosphere. The furnace is, for example, a high frequency heatingfurnace, a resistance heating furnace, an infra-red heating furnace orthe like. While the crucible 1 is heated, the temperature of the top ofthe cover 2 and the temperature of the bottom of the crucible 1 aremeasured by, for example, pyrometer so that the heater is controlled.The temperature of the top of the cover 2 corresponds to the temperatureof the seed crystal 5, and is defined as Ta. The temperature of thebottom of the crucible 1 corresponds to the temperature of the rawmaterial 3, and is defined as Tb. The temperature of the seed crystal(i.e., the seed crystal temperature) Ta is set to be in a range between2000° C. and 2500° C. A special temperature gradient between the seedcrystal 5 and the raw material 3, which is defined as (Ta−Tb)/H, is setto be in a range between 0° C./cm and 20° C./cm. Here, H represents adistance between the seed crystal 5 and the raw material 3. The crystalgrowth is performed after the temperature of the crucible 1 becomes apredetermined temperature. Then, the inner pressure of the growthchamber (i.e., the crucible 1 with the cover 2) is decompressed so thatthe crystal growth begins. The inner pressure is held at a predeterminedconstant pressure, which is in a range between 1 Torr and 100 Torr. Whenthe SiC single crystal 11 grows from the seed crystal 5, the rawmaterial gas, i.e., the sublimation gas of the raw material 3 isgenerated from the raw material 3, so that the raw material gas movesupwardly. The raw material gas is generated from the raw material 3, anda part of the raw material gas is gathered by the gas flow controlmember 6 so that the raw material gas flows toward the seed crystal 5.As shown in FIG. 2, the part of the raw material gas generated from theraw material 3 flows toward the cover 2 through the clearance 9 betweenthe inner wall of the gas flow control member 6 and the seed crystal 5.The other part of the raw material gas generated from the raw material 3flows toward the cover 2 through the gas passage 10 between the innerwall of the crucible 1 and the gas flow control member 6.

Thus, the raw material gas is supplied to the seed crystal 5 in thegrowth chamber so that the SiC single crystal 11 grows from the seedcrystal 5 downwardly. Specifically, the raw material gas flowing throughthe growth chamber is gathered by the gas flow control member 6 so thatthe raw material gas flows toward the seed crystal 5. The concentrationof the raw material gas at the growth surface of the seed crystal 5becomes higher. The raw material gas flows through the clearance 9, andthe initial SiC single crystal 11 a grows from the seed crystal 5. Theinitial SiC single crystal 11 a grows in the early stage of the crystalgrowth. Thus, the initial single crystal 11 a is a part of the singlecrystal 11, which grows in the early stage of the crystal growth. Theinitial SiC singe crystal 11 a has a cylindrical shape having theuniform diameter. Further, the crystal growth proceeds, so that thesecond SiC single crystal 11 b grows from the seed crystal 5. The secondSiC single crystal grows in the second stage of the crystal growth. Thesecond SiC single crystal 11 b continuously grows from the seed crystal5 through the initial SiC single crystal 11 a. The second SiC singlecrystal 11 b has a larger diameter, which becomes larger as the crystalgrowth proceeds. Thus, the initial single crystal 11 a provide acylindrical part of the single crystal 11. The second single crystal 11b provides a diameter-expanded part of the single crystal 11 a.

A SiC poly crystal 12 is deposited on the bottom of the cover 2. Thisis, the SiC single crystal 11 grows from the seed crystal 5, and thepoly crystal 12 is deposited around the base 4 so that the poly crystal12 is completely separated from the single crystal 11. In the abovecrystal growth process, the poly crystal 12 may be easily adhered to theinner wall of the gas flow control member 6. Specifically, the polycrystal 12 may be easily deposited on the inner wall facing the singlecrystal 11 to be formed. The poly crystal 11 may prevent the singlecrystal 12 from increasing the diameter and the length of the singlecrystal 11. Since the bottom end of the gas flow control member 6 isnear the raw material 3, the poly crystal 12 may be easily depositednear the bottom end of the gas flow control member 6. The raw materialgas disposed near the bottom end of the gas flow control member 6 flowsthough the gas passage 10 to the cover 2. Thus, the gas passage 10provides the raw material gas flow bypassing the inner wall of the gasflow control member 6. Specifically, the raw material gas flow bypassesthe inner wall of the gas flow control member 6 facing the singlecrystal 11. Thus, the concentration of the raw material gas on the innerwall of the gas flow control member 6 facing the single crystal 11 isreduced. This is, the concentration of the raw material gas on the innerwall is diluted. Thus, the poly crystal 12 is prevented from adhering tothe bottom end of the gas flow control member 6 and the inner wall ofthe gas flow control member 6. The single crystal 11 grows from the seedcrystal 5 without contacting the poly crystal 12 so that the length andthe diameter of the single crystal 11 become larger.

The shape of the gas flow control member 6 affects the outline of thesingle crystal 11. Specifically, the outline of the single crystal 11becomes a certain shape along with the inner wall of the gas flowcontrol member 6. By using this shape, the strain in the single crystal11 can be controlled. Mainly, the strain in the single crystal 11 isgenerated from the interface between the seed crystal 5 and the base 4.To reduce the strain from the interface, the diameter of the singlecrystal 11 at the beginning of the crystal growth is controlled to beconstant. This is, the diameter is not enlarged at the early stage ofthe crystal growth. Specifically, when the initial single crystal 11 agrows in the initial stage, the diameter of the single crystal 11 a isnot changed substantially, so that a rate of change of the diameter ofthe initial single crystal 11 a per 1 mm in the growth direction iswithin ±5%. Here, the rate of change is defined as A1. To realize this,a rate of change of the inner diameter of the upper cylinder 7 of thegas flow control member 6 per 1 mm in the growth direction is designedwithin ±5%. Here, the rate of change of the upper cylinder 7 is definedas B1.

As shown in FIG. 4, the diameter of the initial single crystal 11 a at acertain position is defined as φ1. Another diameter of the initialsingle crystal 11 a at another certain position is defined as φ2. Thedistance between the certain position and the other certain position is1 mm. The rate A1 (%) of change of the diameter is obtained by[(φ2−φ1)/φ1]×100.

As shown in FIG. 5, the inner diameter of the upper cylinder 7 of thegas flow control member 6 corresponding to the initial single crystal 11a at a certain position is defined as φ11. Another inner diameter of theupper cylinder 7 at another certain position is defined as φ12. Thedistance between the certain position and the other certain position is1 mm. The rate B1 (%) of change of the inner diameter is obtained by[(φ12−φ11)/φ11]×100.

The rate B1 (%) of change of the inner diameter of the upper cylinder 7is designed within ±5% so that the rate A1 (%) of change of the diameterof the single crystal 11 is controlled to be within ±5%. In this case,the strain generated from the interface between the seed crystal 5 andthe base 4 is reduced, so that the single crystal 11 having good qualityis obtained. Specifically, the single crystal 11 having a long lengthand a large diameter grows from the seed crystal 5.

The upper cylinder 7 having the uniform inner diameter is disposed onthe seed crystal side so that the strain in the initial single crystal11 a is reduced. To increase the diameter of the single crystal 11, thelower cylinder 8 having the tapered shape is connected to the uppercylinder 7 continuously. Thus, the diameter of the second single crystal11 b is increased after the strain in the initial single crystal 11 a isreduced. The second single crystal 11 b grows from the seed crystal 5through the initial single crystal 11 a continuously and integrally, sothat the single crystal 11 having the initial single crystal 11 a andthe second single crystal 11 b, which are formed integrally andsuccessively, has good quality.

To realize the above second crystal growth, a rate of change of thediameter of the second single crystal 11 b per 1 mm in the growthdirection is within 50%. Here, the rate of change is defined as A2. Torealize this, a rate of change of the inner diameter of the lowercylinder 8 of the gas flow control member 6 per 1 mm in the growthdirection is designed within 50%. Here, the rate of change of the lowercylinder 8 is defined as B2.

As shown in FIG. 4, the diameter of the second single crystal 11 b at acertain position is defined as φ3. Another diameter of the second singlecrystal 11 b at another certain position is defined as φ4. The distancebetween the certain position and the other certain position is 1 mm. Therate A2 (%) of change of the diameter is obtained by [(φ4−φ3)/φ3]×100.

As shown in FIG. 5, the inner diameter of the lower cylinder 8 of thegas flow control member 6 corresponding to the second single crystal 11b at a certain position is defined as φ13. Another inner diameter of thelower cylinder 8 at another certain position is defined as φ14. Thedistance between the certain position and the other certain position is1 mm. The rate B2 (%) of change of the inner diameter is obtained by[(φ14−φ13)/φ13]×100.

The rate B2 (%) of change of the inner diameter of the lower cylinder 8is designed within 50% so that the rate A2 (%) of change of the diameterof the second single crystal 11 b is controlled to be within 50%. Inthis case, the strain generated from the interface between the seedcrystal 5 and the base 4 is reduced, so that the initial single crystal11 a having good quality is obtained. Successively, the second singlecrystal 11 b grows on the initial single crystal 11 a continuously, sothat the strain in the second single crystal 11 b is also reduced. Thus,the single crystal 11 having a long length and a large diameter growsfrom the seed crystal 5. The single crystal 11 having the initial singlecrystal 11 a and the second single crystal 11 b has high quality.

This method for manufacturing the SiC single crystal 11 has simpleconstruction so that the manufacturing cost is reduced. Further, massproductivity is improved. Furthermore, the single crystal 11 having highquality, large diameter and long length provides the mass production ofthe SiC single crystal wafer, so that the industrial significant of themethod is increased.

The above method is performed, for example, as follows. As shown in FIG.6, the base 4 protruded from the cover 2 has a diameter of 50 mm and aheight of 20 mm. The base 4 has a cylindrical shape. The seed crystal 5has a diameter of 50 mm and a thickness of 1 mm. The seed crystal 5 isbonded on the bottom of the base 4. The gas flow control member 6 isdisposed to surround the base 4. The width of the clearance between thebase 4 and the gas flow control member 6 is 1 mm. The shape of the uppercylinder 7 is designed so that the increasing rate of the diameter ofthe initial single crystal 11 a is in a range between −5%/mm and +5%/mm.The diameter of the initial single crystal 11 a is not changedsubstantially. The shape of the lower cylinder 8 is designed so that theincreasing rate of the diameter of the second single crystal 11 b isequal to or smaller than 50%/mm. The diameter of the second singlecrystal 11 b is increased with the increasing rate equal to or smallerthan 50%/mm. For example, the lower cylinder 8 is designed to have aninner diameter, an increasing rate of which is within 50% per 1 mm in agrowth direction. The gas passage 10 has a width of the clearance of 1mm.

The seed crystal 5 is a plate shaped hexagonal SiC single crystal, whichis formed by the sublimation method. The growth surface of the seedcrystal 5 has a surface orientation of (0001). The crucible 1 is mountedin the high frequency furnace. The inner pressure in the furnace isdecompressed to 2×10⁻⁵ Torr. Then, the high purity argon (i.e., Ar) gasis introduced into the furnace so that the inner pressure in the furnaceis increased up to 700 Torr. Then, the furnace is heated so that thetemperature of the seed crystal 5 is increased up to 2200° C. After thetemperature of the seed crystal 5 reaches to the predeterminedtemperature, the inner pressure in the furnace is decompressed down to10 Torr. Then, the crystal growth is performed to begin. After thisstate is held during 100 hours, the inner pressure in the furnace isincreased up to an atmospheric pressure, and the furnace is cooled.Then, the SiC single crystal 11 is removed from the crucible 5.

The single crystal 11 having the long length and large diameter isobtained. Specifically, the single crystal 11 includes the initialsingle crystal 11 a having the diameter of 50 mm and the height (i.e.,growth height) of 5 mm, and the second single crystal 11 b having themaximum diameter of 71 mm and the growth height of 35 mm. Further, nopoly crystal 12 is adhered on the inner wall of the gas flow controlmember 6, so that the single crystal 11 smoothly grows. Thus, the polycrystal 12 does not prevent the crystal growth of the single crystal 11.This is because the concentration of the raw material gas disposed nearthe inner wall of the gas flow control member 6 is diluted by the gaspassage 10. Furthermore, the poly crystal 12 deposited around the base 4is a small amount, so that the poly crystal 12 does not contact the gasflow control member 6. Therefore, the poly crystal 12 does not contactthe single crystal 11 so that the single crystal 11 is completelyseparated from the poly crystal 12.

The single crystal 11 is sliced in a direction perpendicular to thegrowth direction so that multiple SiC wafers having the {0001} surfaceand thickness of 0.6 mm are obtained. The curvature of the wafer isexamined by X-ray diffraction equipment. The wafer obtained near theseed crystal 5 has the curvature of 0.36°/cm. The wafer obtained fromthe part of the second single crystal 11 b disposed at the bottom of thesingle crystal 11 having the maximum diameter has the curvature of0.0027°/cm. Thus, the curvature is reduced as it goes from the seedcrystal 5 to the bottom of the single crystal 11. Therefore, the strainin the single crystal 11 is also reduced. This effect is confirmed by athermal stress analysis with using a computer. Further, in view of theabove result and the computer analysis, the method for growing thesingle crystal 11 with two steps effectively reduces the strain in thesingle crystal 11, the two steps are such that the diameter of thesingle crystal 11 is changed in two steps.

The method of the present embodiment provides the single crystal 11having high quality, which is separated from the poly crystal 12.Further, the single crystal 11 having the large diameter and the longlength is obtained effectively.

The above method has the following characteristics. As shown in FIG. 3,the raw material gas flowing through the growth chamber is controlled bythe gas flow control member 6 so that the raw material gas flows towardthe seed crystal 5. At this time, the raw material gas passes throughthe clearance 9 between the inner wall of the gas flow control member 6and the seed crystal 5. A part of the raw material gas flows through thegas passage 10 disposed between the inner wall of the crucible 1 and thegas flow control member 6 so that the part of the raw material gasbypasses the gas flow control member 6, i.e., the seed crystal 5. Thesingle crystal 11 grows to have the uniform diameter at the beginning ofthe crystal growth, and then, the single crystal 11 grows to enlarge thediameter at the secondary stage of the crystal growth.

Thus, the raw material gas is concentrated with the gas flow controlmember 6 so that the raw material gas flows toward the seed crystal 5.The concentration of the raw material gas at the growth surface of theseed crystal 5 becomes higher so that the single crystal 11 growssmoothly.

Here, in general, the strain generated at a support portion of the seedcrystal 5, which is the interface between the seed crystal 5 and thebase 4, may be introduced into the single crystal 11. However, in thismethod, the single crystal 11 grows to have the uniform diameter at thebeginning of the crystal growth so that the strain in the initial singlecrystal 11 a is reduced. Thus, the single crystal 11 has the highquality, the large diameter and the long length.

Further, in general, the ploy crystal 12 may be deposited on the innerwall of the gas flow control member 6, the inner wall which faces thesingle crystal 11, so that the poly crystal 12 prevents the singlecrystal 11 from growing larger and longer. In the present method, a partof the raw material gas flows through the gas passage 10 so that thepart of the raw material gas bypasses the gas flow control member 6,i.e., the seed crystal 5. Therefore, the concentration of the rawmaterial gas at the inner wall of the gas flow control member 6, whichfaces the single crystal 11, is reduced. The raw material gas is dilutedso that the poly crystal 12 is prevented from adhering to the inner wallof the gas flow control member 6. Thus, the single crystal 11 growswithout contacting the poly crystal 12 so that the single crystal 11 canhave the long length.

Other Embodiments

The above method can be modified as follows.

One modified method is provided by the gas flow control member 6, theclearance 9 and the gas passage 10. Although the gas flow control member6 has a funnel shape composed of the upper and lower cylinders 7, 8, thegas flow control member 6 can have another shape.

Another modified method is provided by the gas flow control member 6 andthe clearance 9.

Specifically, the above modified methods are described as follows indetail.

Although the apparatus includes the gas passage 10 disposed between theinner wall of the crucible 1 and the outer circumference of the gas flowcontrol member 6, another gas passage 10 can be used. For example, asshown in FIGS. 7 and 8, the gas passage 10 is provided by a through hole23 formed in the gas flow control member 6, or the gas passage 10 isprovided by another gas passage 24. In FIG. 7, the through hole 23 isdisposed on the lower cylinder 8 of the gas flow control member 6.Specifically, the through hole 23 is disposed outside of the lowercylinder 8. The part of the raw material gas flows through the throughhole 23 so that the part of the raw material gas bypasses the seedcrystal 5. The through hole 23 provides the raw material gas flowbypassing the seed crystal 5. In FIG. 8, the gas passage 24 provides theraw material gas flow bypassing the seed crystal 5.

Although the gas flow control member 6 is composed of the upper andlower cylinders 7, 8, the gas flow control member 6 can have anothershape. For example, in FIG. 9, the gas flow control member 6 includes anupper part 31 and a lower part 32. The upper part 31 has a cylindricalshape with a predetermined uniform diameter. The lower cylinder 32 has adisk shape. The upper and lower parts 31, 32 are connected together. Thegas passage 10 is disposed between the outer circumference of the lowerpart 32 and the inner wall of the crucible 1. In FIG. 10, the gas flowcontrol member 40 has a tapered cylindrical shape (i.e., a circular coneshape). The gas passage 10 is disposed between the bottom circumferenceof the gas flow member 40 and the inner wall of the crucible 1. In FIG.11, the gas flow control member 50 has a tapered cylindrical shape(i.e., a horn shape). The gas passage 10 is disposed between the bottomcircumference of the gas flow member 50 and the inner wall of thecrucible 1. The gas flow control member 50 has an inner wall formed by acurved surface. The top of the gas flow control member 50 correspondingto the initial single crystal 11 a is narrowed. Therefore, the strain inthe single crystal 11 is reduced. After the strain is reduced at thebeginning of the crystal growth, the diameter of the single crystal 11is increased.

Although the method is applied to the modified Lely method, the methodcan be applied to another crystal growth method such as a chemical vapordeposition method. In case of the chemical vapor deposition, a reactivechamber (i.e., a growth chamber) 60 has top and bottom surfaces openedso that the reactive chamber 60 does not provide almost closed space, asshown in FIG. 12. Thus, the reactive chamber 60 includes an upperopening 63 and a lower opening 62 so that the raw material gas passesthrough the reactive chamber 60. The raw material gas is introduced intothe reactive chamber 60 through the lower opening 62, and then, the gasis discharged from the upper opening 63. In this method, a mixed gascomposed of mono silane gas including silicon and propane gas includingcarbon is introduced into the chamber 60 so that the SiC single crystal11 grows, although the single crystal 11 is formed from a solid rawmaterial such as powder by using the sublimation method. Here, the seedcrystal 5 is bonded on the bottom of the base 4, which is disposed onthe upper opening side.

Thus, the method can be applied to other methods instead of thesublimation method. Further, the method can be used for manufacturingother crystal instead of the SiC single crystal 11. For example, themethod can be used for an inorganic compound such as a compoundsemiconductor, a single element semiconductor, and an oxide compound.The compound semiconductor is, for example, zinc selenide (i.e., ZnSe,which is II-VI series compound), gallium arsenide (i.e., GaAs, which isIII-V series compound), aluminum nitride (i.e., AlN, which is III-Vseries nitride compound), or gallium nitride (i.e., GaN, which is III-Vseries nitride compound). The single element semiconductor is, forexample, silicon (i.e., Si), or diamond (i.e., C). The oxide compoundis, for example, aluminum oxide (i.e., Al₂O₃) or titanium oxide (i.e.,TiO₂).

Such changes and modifications are to be understood as being within thescope of the present invention as defined by the appended claims.

1-10. (canceled)
 11. An apparatus for manufacturing a single crystal,the apparatus comprising: a seed crystal; a reactive chamber for flowinga raw material gas so that the single crystal grows from the seedcrystal disposed in the reactive chamber; a gas flow control member forcontrolling the raw material gas to flow toward the seed crystal; and agas passage disposed between the reactive chamber and the gas flowcontrol member, wherein the gas flow control member surrounds the seedcrystal through a clearance, wherein the clearance is capable of passingthe raw material gas therethrough, and wherein the gas passage iscapable of flowing a part of the raw material gas to bypass the seedcrystal.
 12. The apparatus according to claim 11, wherein the gas flowcontrol member provides the single crystal to have a predeterminedshape, which includes an initial crystal growth part having an uniformdiameter in a growth direction, and wherein the initial crystal growthpart is to grow from the seed crystal at a beginning step of a crystalgrowth.
 13. The apparatus according to claim 11, wherein the gas flowcontrol member includes a first part, which has an inner diameter,wherein the inner diameter has a rate of change within .+−0.5% per 1 mmin a growth direction, and wherein the first part of the gas flowcontrol member corresponds to an initial crystal growth part of thesingle crystal, which is to grow from the seed crystal at a beginningstep of a crystal growth.
 14. The apparatus according to claim 13,wherein the gas flow control member further includes a second part,which has a tapered shape and has an inner diameter, wherein the innerdiameter has an increasing rate of the diameter within 50% per 1 mm inthe growth direction, and wherein the second part of the gas flowcontrol member corresponds to a secondary crystal growth part of thesingle crystal, which is to grow from the seed crystal next to theinitial crystal growth part at a secondary step of the crystal growth.15. An apparatus for manufacturing a single crystal, the apparatuscomprising: a seed crystal; a reactive chamber for flowing a rawmaterial gas so that the single crystal grows from the seed crystaldisposed in the reactive chamber; a gas flow control member forcontrolling the raw material gas to flow toward the seed crystal; and athrough hole disposed in the gas flow control member, wherein the gasflow control member surrounds the seed crystal through a clearance,wherein the clearance is capable of passing the raw material gastherethrough, wherein the through hole is capable of flowing a part ofthe raw material gas to bypass the seed crystal, and wherein the throughhole is disposed at an outside of the gas flow control member.
 16. Theapparatus according to claim 15, wherein the gas flow control memberprovides the single crystal to have a predetermined shape, whichincludes an initial crystal growth part having an uniform diameter in agrowth direction, and wherein the initial crystal growth part is to growfrom the seed crystal at a beginning step of a crystal growth.
 17. Theapparatus according to claim 16, wherein the gas flow control memberincludes a first part having an uniform diameter, and wherein the firstpart of the gas flow control member corresponds to the initial crystalgrowth part of the single crystal.
 18. The apparatus according to claim17, wherein the gas flow control member has a second part having atapered shape, wherein the second part of the gas flow control membercorresponds to a secondary crystal growth part of the single crystal,and wherein the secondary crystal growth part of the seed crystal is togrow from the seed crystal next to the initial crystal growth part at asecondary step of the crystal growth.
 19. The apparatus according toclaim 17, wherein the uniform diameter of the first part of the gas flowcontrol member has a changing rate of the diameter within ±5% per 1 mmin the growth direction.
 20. The apparatus according to claim 18,wherein the second part of the gas flow control member has a increasingrate of a diameter of the second part within 50% per 1 mm in the growthdirection.